Removal of polishing-induced damage from 6H-SiC(0001) substrates by hydrogen etching
- 1 September 1996
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 167 (1-2) , 391-395
- https://doi.org/10.1016/0022-0248(96)00296-5
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
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