Single-growth-step GaAs/AlGaAs distributed Braggreflector lasers with holographically-defined recessedgratings
- 27 October 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (22) , 1858-1859
- https://doi.org/10.1049/el:19941262
Abstract
A ridge waveguide GaAs/AlGaAs quantum well DBR laser fabricated with a simplified grating recess-technology and a third order grating is described. The reflector is fabricated on top of a recessed waveguide using holographic exposure followed by reactive ion etching. The laser operates on a single longitudinal and lateral mode with threshold current as low as 20 mA, output power 5 mW per facet and is intended for monolithically integrated interferometer applications.Keywords
This publication has 6 references indexed in Scilit:
- Ridge waveguide distributed Bragg reflector InGaAs/GaAsquantum well lasersElectronics Letters, 1994
- High-power singlemode AlGaAs distributed Bragg reflectorlaser diodes operating at 856 nmElectronics Letters, 1994
- Extremely smooth sidewalls for GaAs/AlGaAs ridge waveguidesElectronics Letters, 1993
- Low threshold-current, wide tuning-range, butt-joint DBR laser grown with four MOVPE stepsElectronics Letters, 1993
- Multi-quantum well distributed feedback and distributed Bragg reflector lasersSemiconductor Science and Technology, 1990
- Semiconductor lasers for coherent optical fiber communicationsJournal of Lightwave Technology, 1990