Two-dimensional confinement effects in gate-all-around (GAA) MOSFETs
- 6 April 1998
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 42 (4) , 499-504
- https://doi.org/10.1016/s0038-1101(98)00061-6
Abstract
No abstract availableKeywords
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