GaAs Molecular Beam Epitaxy on Be Implanted GaAs Layers
- 1 August 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (8A) , L520
- https://doi.org/10.1143/jjap.22.l520
Abstract
GaAs layers have been grown by molecular beam epitaxy (MBE) on Be implanted GaAs layers using maskless ion implantation. Low-temperature (4.2 K) photoluminescence (PL) of the Be implanted layers and successively grown MBE layers on the implanted layer without post-anneal of implanted damages, has been measured. PL intensity of bound exiton from the implanted layers with dose of 1×1012-1×1013 ions cm-2 at 160 keV decreased considerably compared with the unimplanted layers. However, PL intensity measurement has shown that a high quality GaAs could be grown on top of the implanted layer by MBE at 600°C without post-implantation anneal.Keywords
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