Modal gain and internal optical mode loss of a quantum dot laser

The modal gain spectra and internal optical mode loss of a semiconductor laser structure containing a single layer of InGaAs quantum dots have been measured independently and directly as a function of current density. The quantum dot gain exhibits no obvious polarization dependence. The maximum modal gain of (11±4) ${\mathrm{cm}}^{\text{−1}}$ obtained from the ground state of a single layer of quantum dots is in this case insufficient for lasing operation since the internal optical mode loss measured on the same sample is (11±4) ${\mathrm{cm}}^{\text{−1}}.$ As expected laser emission is not observed from the dot ground state, but from the excited dot state or from the wetting layer depending on device length.