Atomic scale structure of microtwins in single crystal Si grown by lateral solid phase epitaxy

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Abstract
Structural study of microtwins in single-crystal Si grown by lateral solid phase epitaxy has been done using high-resolution cross-sectional transmission electron microscopy. Microtwins with a few {111} atomic planes grow from the Si/SiO2 interface and extend to 20–30 nm in length. Using multibeam interference technique near the Scherzer focus, a structure image of a microtwin with a thickness of four {111} atomic planes was obtained. Lattice fringes of the matrix on both sides of the microtwin are shifted each other by one third of the {111} planar distance. From the analysis of a structural model of the microtwins, the growth mechanism of microtwins and the appearance of moire fringes are discussed. Consequently, the fact that the microtwins which originate from the Si/SiO2 interface are localized near the interface is shown clearly.