A review of CBE, MOMBE and GSMBE
- 1 May 1991
- journal article
- review article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 111 (1-4) , 529-538
- https://doi.org/10.1016/0022-0248(91)91034-8
Abstract
No abstract availableKeywords
This publication has 29 references indexed in Scilit:
- Surface segregation of indium during growth of InGaAs in chemical beam epitaxyJournal of Crystal Growth, 1990
- Study of AlInP and GaInP grown by gas source molecular beam epitaxy (GSMBE)Journal of Crystal Growth, 1990
- High-purity InP grown by gas source molecular beam epitaxy (GSMBE)Journal of Crystal Growth, 1990
- Optoelectronic devices by GSMBEJournal of Crystal Growth, 1990
- Modulated-beam mass spectrometry studies of the MOMBE growth of (100) GaAs and In0.1Ga0.9AsJournal of Crystal Growth, 1990
- Progress in chemical beam epitaxyJournal of Crystal Growth, 1990
- Chemical beam epitaxy of indium phosphideJournal of Crystal Growth, 1990
- From chemical vapor epitaxy to chemical beam epitaxyJournal of Crystal Growth, 1989
- A model for the surface chemical kinetics of GaAs deposition by chemical-beam epitaxyJournal of Applied Physics, 1988
- Observations on intensity oscillations in reflection high-energy electron diffraction during chemical beam epitaxyApplied Physics Letters, 1987