High performance 660 nm InGaP/AIGaInP quantum wellmetal cladding ridge waveguide laser diode
- 1 August 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (16) , 1488-1490
- https://doi.org/10.1049/el:19961003
Abstract
A high performance 660 nm metal cladding ridge waveguide laser diode was fabricated from a compressively strained In0.6Ga0.4P/(AlxGa1-x)0.5In0.5P single quantum well laser structure. The 4 µm wide ridge waveguide diode had a threshold current of 31 mA with a differenfial quantum efficiency of 45%/facet (slope efficiency of 0.85 W/A) under CW operation. The characteristic temperature was 120 K from 20 to 75°C. The diode operated in a single transverse mode up to 22 mW/facet.Keywords
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