Closely Spaced Independently Addressable Dual-Beam Visible Lasers with Strained GaInP Quantum Wells
- 1 September 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (9R) , 4803-4808
- https://doi.org/10.1143/jjap.34.4803
Abstract
Closely spaced (15 µ m center-to-center spacing) independently addressable dual-beam visible lasers were demonstrated using strained GaInP quantum well structures. Crosstalk characteristics were studied experimentally as well as theoretically. The estimated crosstalk of uncoated devices was around 3% with bias, and 10% without bias in CW-mode operation. The value of 3% was small enough for applications such as printers and optical disks.Keywords
This publication has 11 references indexed in Scilit:
- Dual spot visible laser diodesElectronics Letters, 1992
- Individually addressable, high power singlemode laser diodes operating at 0.8, 0.85, and 0.92 μmElectronics Letters, 1992
- High-Power, 790 nm, Eight-Beam AlGaAs Laser Array with a Monitoring PhotodiodeJapanese Journal of Applied Physics, 1992
- High temperature (≳150 °C) and low threshold current operation of AlGaInP/GaxIn1−xP strained multiple quantum well visible laser diodesApplied Physics Letters, 1991
- Properties of closely spaced independently addressable lasers fabricated by impurity-induced disorderingApplied Physics Letters, 1990
- Thermal impedance of diode lasers: Comparison of experimental methods and a theoretical modelJournal of Applied Physics, 1981
- Thermal resistance of heterostructure lasersJournal of Applied Physics, 1975
- A GaAs-AlxGa1-xAs Double Heterostructure Planar Stripe LaserJapanese Journal of Applied Physics, 1973
- Phase extent of gallium arsenide determined by the lattice constant and density methodActa Crystallographica, 1965
- Electron and Phonon Scattering in GaAs at High TemperaturesPhysical Review B, 1965