Superior Pinch-Off Characteristics at 400°C in AlGaN/GaN Heterostructure Field Effect Transistors
- 1 September 1999
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 38 (9A) , L987-989
- https://doi.org/10.1143/jjap.38.l987
Abstract
AlGaN/GaN field effect transistors have been fabricated on SiC(0001) substrates, and the I–V characteristics in the devices have been examined from room temperature to 400°C. In addition to excellent current saturation characteristics, sufficient pinch-off characteristics have been obtained up to a temperature of 400°C for the first time, as the result of reduced crystal defects and reduced etching damage in the devices. The temperature dependence of the transconductance has been also examined. The degradation rate in the transconductance has been proved to be low above 300°C: the transconductance degraded by only 8% for a temperature increase from 350 to 400°C. Sufficient pinch-off characteristics and a relatively low degradation rate in the transconductance ensure the practical use of the devices at high temperatures.Keywords
This publication has 20 references indexed in Scilit:
- High-transconductance self-aligned AlGaN/GaN modulation-doped field-effect transistors with regrown ohmic contactsApplied Physics Letters, 1998
- Two-dimensional electron-gas density in AlXGa1−XN/GaN heterostructure field-effect transistorsApplied Physics Letters, 1998
- The influence of the deformation on the two-dimensional electron gas density in GaN–AlGaN heterostructuresApplied Physics Letters, 1998
- Piezoelectric charge densities in AlGaN/GaN HFETsElectronics Letters, 1997
- AlGaN/GaN HEMTs grown on SiC substratesElectronics Letters, 1997
- High temperature characteristics of AlGaN/GaN modulation doped field-effect transistorsApplied Physics Letters, 1996
- Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistorsApplied Physics Letters, 1996
- Electron mobility in two-dimensional electron gas in AIGaN/GaN heterostructures and in bulk GaNJournal of Electronic Materials, 1996
- Damage Induced By A Low-Biased 92-MHz Anode-Coupled Reactive Ion Etcher Using Chlorine-Nitrogen Mixed PlasmasMRS Proceedings, 1996
- Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °CApplied Physics Letters, 1995