MODULATION WAVELENGTH DEPENDENCE OF THE INTERDIFFUSION IN AMORPHOUS Si/Ge MULTILAYER FILMS
- 1 January 1985
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Interdiffusion in Si/Ge amorphous multilayer filmsApplied Physics Letters, 1985
- Calorimetric studies of crystallization and relaxation of amorphous Si and Ge prepared by ion implantationJournal of Applied Physics, 1985
- Diffusion and precipitation in amorphous SiApplied Physics Letters, 1985
- Spinodal decomposition in amorphous systemsJournal of Non-Crystalline Solids, 1984
- Interdiffusion studies in metallic glasses using compositionally modulated thin filmsJournal of Non-Crystalline Solids, 1984
- Correlations for diffusion constantsActa Metallurgica, 1980
- Thermoelectric power of isolated narrow bands in the presence of correlation effectsPhysical Review B, 1976
- Specific Heat and Heat of Crystallization of Amorphous GermaniumJournal of Applied Physics, 1969
- Effect of Gradient Energy on Diffusion in Gold-Silver AlloysJournal of Applied Physics, 1969
- Free Energy of a Nonuniform System. I. Interfacial Free EnergyThe Journal of Chemical Physics, 1958