High-gain, low-noise monolithic HEMT distributed amplifiers up to 60 GHz
- 1 January 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 38 (12) , 2016-2017
- https://doi.org/10.1109/22.64588
Abstract
No abstract availableThis publication has 1 reference indexed in Scilit:
- Extremely high gain, low noise InAlAs/InGaAs HEMTs grown by molecular beam epitaxyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003