Extremely high gain, low noise InAlAs/InGaAs HEMTs grown by molecular beam epitaxy

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Abstract
High-performance InAlAs/InGaAs planar-doped HEMTs (high-electron-mobility transistors) lattice-matched to InP have been fabricated with a 0.25- mu m T-gate. A maximum extrinsic transconductance g/sub m/ of 900 mS/mm, corresponding to an intrinsic g/sub m/ of 1640 mS/mm, was obtained at room temperature. RF measurements at 18 GHz yielded a minimum noise figure of 0.5 dB with an associated gain of 15.2 dB and a maximum stable gain of 20.9 dB. At 58 GHz, the devices exhibited a 1.2-dB minimum noise figure with an 8.5-dB associated gain. At 63 GHz, a maximum available gain of 15.4 dB was measured for a single-stage amplifier. This value, extrapolated to -6 dB/octave, yielded a maximum frequency of oscillation f/sub max/ of 380 GHz, which is the highest f/sub max/ ever reported for any transistor. A three-stage HEMT amplifier exhibited an average noise figure of 3.0 dB with a gain of 22.0+or-0.2 dB from 60-65 GHz.<>