Extremely High 2DEG Concentration in Selectively Doped In0.53Ga0.47As/N-In0.52Al0.48As Heterostructures Grown by MBE
- 1 January 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (1A) , L59
- https://doi.org/10.1143/jjap.26.l59
Abstract
Electron mobility and 2DEG concentration in MBE-grown, selectively doped In0.53Ga0.47As/N-In0.52Al0.48As heterostructures, lattice-matched to InP, were studied as a function of Si-doping concentration in N-In0.52Al0.48As. A 2DEG concentration of as high as 3.7×1012 cm-2 (µ=22,000cm2/Vs at 77 K) was achieved with a Si-doping concentration of 5×1018 cm-3 in N-In0.52Al0.48As. This N s value is the highest 2DEG concentration ever reported for selectively doped single-interface heterostructures, and is almost four times higher than that of conventional GaAs/N-AlGaAs heterostructures.Keywords
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