SiC/SiO2 micropatterning by ultraviolet irradiation and heat treatment of a poly(phenylsilyne) film
- 15 March 1995
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 77 (6) , 2796-2800
- https://doi.org/10.1063/1.358684
Abstract
High-resolution micropatterning of SiC/SiO2 was achieved by combining the photochemical and thermal properties of poly(phenylsilyne) having Si-network structure. The laser flash photolysis of poly(phenylsilyne) film showed the formation of silyl radical as an intermediate during photodegradation. The XPS spectrum of the Si—Si chain changed into that of the siloxane chain by photo-oxidation in air. FT-IR spectra showed the formation of SiC and SiO2 by the heat treatment of unirradiated and irradiated poly(phenylsilyne) films, respectively. SiC/SiO2 micropatterning was obtained by the heat treatment of poly(phenylsilyne) film after ultraviolet irradiation with a photomask.This publication has 22 references indexed in Scilit:
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