Zinc-Diffusion in GaAs Using a Sintered Ternary Source
- 1 April 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (4R)
- https://doi.org/10.1143/jjap.26.641
Abstract
A ternary Zn3As2–ZnAs2–GaAs source for the diffusion of Zn in GaAs has been developed by a low temperature sintering technique that does not require special safety precautions. Wafers diffused using this source remained free of damage. Doping concentrations and diffusion depths agree with the results of the best high temperature Ga/As/Zn diffusion sources.Keywords
This publication has 4 references indexed in Scilit:
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