Modulated S-parameter measurements for isothermal microwave device characterization

1 November 1996

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 17 (11) , 537-539
https://doi.org/10.1109/55.541773

Abstract

The validity of extracted microwave device models is critically dependent on the completeness, accuracy, and appropriateness of the starting device characterization data. In this letter we will present a novel technique for determining the S-parameters of a device under isothermal (i.e., no heating) operation. Additionally, this technique can be applied to determining the CW S-parameters under more extreme (e.g., forward bias/breakdown) operation. By pulse-biasing the device from the "OFF" to the "ON" state, while performing standard S-parameter measurements, resultant data is found to be characteristic of the weighted (by duty factor) scalar sum of the devices "ON"-state and "OFF"-state S-parameter(s). We will show how these measurements can then be used to interpret the devices isothermal CW S-parameters.

Keywords

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