n-ZnO/p-CdSiAs2 heterojunction solar cells

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Abstract
Heterojunction solar cells were prepared by magnetron sputtering of n‐ZnO onto p‐CdSiAs2 single crystals. These crystals were grown by chemical vapor‐phase transport and have a resistivity of 2 Ω cm, a Hall mobility of 300 cm2/V s, and a net carrier density of 1016 cm−3 at room temperature. The heterojunctions exhibit short‐circuit current densities up to 12 mA/cm2 and open‐circuit voltages between 180 and 250 mV with power conversion efficiencies up to 1% under 72 mW/cm2 halogen lamp illumination. Open‐circuit voltage values could be increased by heat treatment at 80 °C for 15 min in an argon atmosphere. By measuring the reflection and the quantum yield versus wavelength the efficiency losses in the short‐wavelength region could be attributed to the corresponding high reflection.

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