Porous Silicon as a Versatile Platform for Laser Desorption/Ionization Mass Spectrometry
Top Cited Papers
- 15 December 2000
- journal article
- research article
- Published by American Chemical Society (ACS) in Analytical Chemistry
- Vol. 73 (3) , 612-619
- https://doi.org/10.1021/ac000746f
Abstract
Desorption/ionization on porous silicon mass spectrometry (DIOS-MS) is a novel method for generating and analyzing gas-phase ions that employs direct laser vaporization. The structure and physicochemical properties of the porous silicon surfaces are crucial to DIOS-MS performance and are controlled by the selection of silicon and the electrochemical etching conditions. Porous silicon generation and DIOS signals were examined as a function of silicon crystal orientation, resistivity, etching solution, etching current density, etching time, and irradiation. Pre- and postetching conditions were also examined for their effect on DIOS signal as were chemical modifications to examine stability with respect to surface oxidation. Pore size and other physical characteristics were examined by scanning electron microscopy and Fourier transform infrared spectroscopy, and correlated with DIOS-MS signal. Porous silicon surfaces optimized for DIOS response were examined for their applicability to quantitative analysis, organic reaction monitoring, post-source decay mass spectrometry, and chromatography.Keywords
This publication has 18 references indexed in Scilit:
- Greffage de molécules à la surface du silicium par voie électrochimiqueThe Canadian Journal of Chemical Engineering, 1998
- Macroporous p-Type Silicon Fabry−Perot Layers. Fabrication, Characterization, and Applications in BiosensingJournal of the American Chemical Society, 1998
- Lewis Acid Mediated Functionalization of Porous Silicon with Substituted Alkenes and AlkynesJournal of the American Chemical Society, 1998
- Surface chemistry of Luminescent Silicon NanocrystallitesAdvanced Materials, 1997
- Mass determination of human immunoglobulin IgM using matrix‐assisted laser desorption/ionization time‐of‐flight mass spectrometryRapid Communications in Mass Spectrometry, 1994
- Formation Mechanism and Properties of Electrochemically Etched Trenches in n‐Type SiliconJournal of the Electrochemical Society, 1990
- Laser desorption ionization of proteins with molecular masses exceeding 10,000 daltonsAnalytical Chemistry, 1988
- Porosity and Pore Size Distributions of Porous Silicon LayersJournal of the Electrochemical Society, 1987
- Fast atom bombardment of solids as an ion source in mass spectrometryNature, 1981
- Matrix-assisted secondary ion mass spectra of biological compoundsAnalytical Chemistry, 1981