Self-Organizing Semiconductor Epitaxial Films by Turing Instability
- 1 March 1998
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 37 (3S) , 1487-1492
- https://doi.org/10.1143/jjap.37.1487
Abstract
We describe for the first time diagrams of the surface topography domain in a strained InGaAs/AlGaAs system grown on GaAs (311)B/A surfaces during metalorganic-vapor-phase-epitaxial growth. The surface rearrangement process resulting in the stationary pattern formation of the various quasi-periodic nanostructures seems to belong to the class of a Turing-type self-organization phenomenon in non-linear dynamic systems. Experimental results might indicate the existence of a novel fourth growth mode due to Turing-type self-organization in addition to the three well-known epitaxial growth modes.Keywords
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