Molecular beam epitaxy grown InGaN multiple quantum well structures optimized using in situ cathodoluminescence
- 1 May 1998
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 16 (3) , 1286-1288
- https://doi.org/10.1116/1.590001
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Optimization of AlGaN films grown by RF atomic nitrogen plasma using in-situ cathodoluminescenceJournal of Crystal Growth, 1997
- Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy compositionApplied Physics Letters, 1997
- GaN growth by a controllable RF-excited nitrogen sourceJournal of Crystal Growth, 1995
- Cathodoluminescence scanning electron microscopy of semiconductorsJournal of Applied Physics, 1986