Fermi level pinning at metal-CdTe interfaces
- 15 March 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (6) , 484-486
- https://doi.org/10.1063/1.93151
Abstract
Schottky barrier formation has been studied for a range of metals on vacuum cleaved CdTe surfaces, using a multi technique approach. Provided one eliminates the situation of cadmium outdiffusion into high work function metals from the analysis, then the data are far closer to the Schottky limit than previously reported. The influence of defects is discussed in the light of recent data relating to Au-Cd alloy contacts.Keywords
This publication has 12 references indexed in Scilit:
- Reactive interdiffusion and electronic barriers at metal–CdS and metal–CdSe interfaces: Control of Schottky barrier height using reactive interlayersJournal of Vacuum Science and Technology, 1981
- The use of Au-Cd alloys to achieve large Schottky barrier heights on CdTeJournal of Applied Physics, 1981
- Surface defect effects on Schottky barriersJournal of Vacuum Science and Technology, 1981
- Energy levels of semiconductor surface vacanciesJournal of Vacuum Science and Technology, 1980
- Metal contacts to clean and oxidized cadmium telluride and indium phosphide surfacesJournal of Vacuum Science and Technology, 1980
- Unified defect model and beyondJournal of Vacuum Science and Technology, 1980
- Surface vacancies in InP and GaAlAsApplied Physics Letters, 1980
- Chemically Induced Charge Redistribution at Al-GaAs InterfacesPhysical Review Letters, 1979
- The work function of the elements and its periodicityJournal of Applied Physics, 1977
- Surface Properties of II-VI CompoundsPhysical Review B, 1967