Rapid Heating Reflow of Phosphosilicate Glass Enhanced by As Ion Implantation
- 1 September 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (9A) , L795-797
- https://doi.org/10.1143/jjap.25.l795
Abstract
Reflow of phosphosilicate glass (PSG) layers enhanced by implanting As ions at 150 keV to 1×1017/cm2 was studied by the rapid heating technique (950∼1150°C, 80 s) using a halogen lamp. The stress produced by the implantation is completely removed by a furnace preannealing at 600°C for 30 min prior to the rapid heating. The As ion implantation reduces the reflow temperature by 50∼100°C as compared with unimplanted PSG layers. No degradation is observed in electrical breakdown voltages and reliability tests of Al interconnections using a pressure cooker.Keywords
This publication has 3 references indexed in Scilit:
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- A Scanning Electron Microscope Investigation of Glass Flow in MOS Integrated Circuit FabricationJournal of the Electrochemical Society, 1974