The determination of lattice strain in proton-bombarded regions of single-crystal gallium arsenide, using precision X-ray measurements
- 11 March 1977
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 10 (4) , L29-L31
- https://doi.org/10.1088/0022-3727/10/4/001
Abstract
Using X-ray methods capable of detecting changes in lattice parameter of a few parts per million, the residual damage in proton-bombarded gallium arsenide has been detected. The lattice strain in the bombarded region has been determined at approximately 200 ppm for a dose of 2*1015 cm-2 at 600 keV. The lattice dilation per defect, following the bombardment, has also been estimated at 10-20%.Keywords
This publication has 9 references indexed in Scilit:
- Precise lattice parameter determination of dislocation-free gallium arsenide—I: X-ray measurementsSolid-State Electronics, 1976
- High-efficiency proton-isolated GaAs IMPATT diodesElectronics Letters, 1974
- Electrical conductivity of disordered layers in GaAs crystal produced by ion implantationJournal of Applied Physics, 1974
- Interface stress of AlxGa1−xAs–GaAs layer structuresJournal of Applied Physics, 1973
- Direct Measurement of Internal Strains in Liquid Phase Epitaxial Garnet Film on Gadolinium Gallium Garnet (111) PlateJapanese Journal of Applied Physics, 1973
- Optical and electrical properties of proton-bombarded p-type GaAsJournal of Applied Physics, 1973
- Channel optical waveguide directional couplersApplied Physics Letters, 1973
- X-ray measurement of elastic strain and annealing in semiconductorsSolid-State Electronics, 1970
- Isolation of junction devices in GaAs using proton bombardmentSolid-State Electronics, 1969