Crystallography of In on GaAs(110): Possible Relationship of Laterally Inhomogeneous Structure to Fermi-Level Pinning

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Abstract
The crystallography of In adsorbed at room temperature on cleaved GaAs (110) has been studied with reflection high-energy-electron diffraction. In adsorbs as three-dimensional prism-shaped islands that align in two orientations relative to the substrate. The average island size remains constant for coverages from 0.2 to ∼5 monolayers. At 5 monolayers, the approximate coverage at which the Fermi level has been found to pin, the islands are still physically separated. These results are evidence for a Debye-length relationship for Fermi-level pinning in this system.

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