Basal orientation aluminum nitride grown at low temperature by rf diode sputtering
- 1 March 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (3) , 1807-1808
- https://doi.org/10.1063/1.330682
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
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