A simple physical model including velocity overshoot for n-channel heterostructure FETs

This publication has 14 references indexed in Scilit:

• An analytic theory of the impact of velocity overshoot on the drain characteristics of field-effect transistors
  IEEE Transactions on Electron Devices, 1992
• Multidimensional augmented current equation including velocity overshoot
  IEEE Electron Device Letters, 1991
• A two-dimensional self-consistent numerical model for high electron mobility transistor
  IEEE Transactions on Electron Devices, 1991
• Electron velocity saturation in heterostructure field-effect transistors
  IEEE Transactions on Electron Devices, 1990
• Numerical analysis of nonequilibrium electron transport in AlGaAs/InGaAs/GaAs pseudomorphic MODFETs
  IEEE Transactions on Electron Devices, 1990
• Simulation of a GaAs MESFET including velocity overshoot: an extended drift-diffusion formalism
  IEEE Electron Device Letters, 1989
• Simulation of submicrometer GaAs MESFET's using a full dynamic transport model
  IEEE Transactions on Electron Devices, 1988
• GaAs Devices and Circuits
  Published by Springer Nature ,1987
• Determination of effective saturation velocity in n⁺self-aligned GaAs MESFET's with submicrometer gate lengths
  IEEE Transactions on Electron Devices, 1986
• Model for modulation doped field effect transistor
  IEEE Electron Device Letters, 1982