Polarization dependence of intraband absorption in self-organized quantum dots

Photoluminescence and intraband absorption were investigated in n-doped self-organized InAs and ${\mathrm{In}}_{\mathrm{0.35}}{\mathrm{Ga}}_{\mathrm{0.65}}\mathrm{As}$ quantum dots grown on a GaAs substrate. Intraband absorption of the dots is strongly polarized along the growth axis in the mid infrared spectral range. The absorption is maximum at around 120 meV for InAs dots and at 130 meV for ${\mathrm{In}}_{\mathrm{0.35}}{\mathrm{Ga}}_{\mathrm{0.65}}\mathrm{As}$ dots. The experimental results on InAs dots are in agreement with published theoretical calculations.