Energy dependence of silicon amorphization during ion implantation-part I

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Abstract
A new mechanism is proposed for interpreting silicon amorphization during ion implantation. According to the proposed mechanism an amorphous state is formed in a disordered region only under the following conditions: 1) A high pressure is produced in a disordered region resulting in enhanced diffusion and a decreased concentration of “hot atoms” in this region. 2) Crystal cells surrounding the disordered region are sufficiently distorted (damaged). Silicon amorphization doses are calculated according to the proposed mechanism for B+, P+, Ar+, and Sb+ ions. It is shown that for light ions the dose ϕcr at which homogeneous amorphization of an implanted silicon layer is achieved increases as E ranges from 10 to 200 keV For Sb+ ϕcr decreases as E is varied from 10 to 100 keV and with a further increase in E the value of ϕcr remains constant. Our estimates agree well with experimental data.