Effective barrier height, conduction-band offset, and the influence of p-type δ doping at heterojunction interfaces: The case of the InAs/GaAs interface

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Abstract
We demonstrate that the effective band discontinuity at an n‐isotype heterojunction interface can be significantly modified by introducing p‐type δ doping close to the interface during molecular beam epitaxy growth. This is shown for the case of the relaxed InAs‐GaAs interface where the band discontinuities with and without δ doping have been measured by the I‐V technique coupled with appropriate numerical modeling of the interface.