MRAM with lamellar structure as free layer
- 22 March 2004
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- On the shape optimization of magnetic random access memory element designJournal of Applied Physics, 2003
- 2D write addressability of tunneling junction MRAM elementsIEEE Transactions on Magnetics, 2001