Growth, microstructure, and resistivity of RuO2 thin films grown by metal-organic chemical vapor deposition
- 1 August 1998
- journal article
- Published by Springer Nature in Journal of Materials Research
- Vol. 13 (8) , 2281-2290
- https://doi.org/10.1557/jmr.1998.0318
Abstract
Polycrystalline RuO2 thin films were grown by metal-organic chemical vapor deposition (MOCVD) on both SiO2/Si(001) and Pt/Ti/SiO2/Si(001) substrates. Films having a controllable and reproducible structural texture and phase purity were synthesized by carefully controlling deposition parameters. Moderate growth temperatures (∼350 °C) and low growth rates (30 Å/min). The most conductive RuO3 films had resistivities of 34 to 40 µΩ−cm at 25 °C, an average grain size of 65 ± 15 nm, and a surface roughness (rms) of 3 to 10 nm. Both single-phase Ru and mixed Ru/RuO2 phase material were also fabricated at low temperatures (<350 °C) by using lower oxygen flow concentrations (<10%).Keywords
This publication has 30 references indexed in Scilit:
- In-situ growth of Pb(Zr0.5Ti0.5)O3/RuO2heterostructures on Si(001) using low-temperature metal-organic chemical vapor depositionIntegrated Ferroelectrics, 1997
- RuO2 Bottom Electrodes for Ferroelectric (Pb, La)(Zr, Ti)O3 Thin Films by Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1995
- Stable thin film resistors using double layer structureJournal of Materials Research, 1995
- Influence of platinum interlayers on the electrical properties of RuO2/Pb(Zr0.53Ti0.47)O3/RuO2 capacitor heterostructuresApplied Physics Letters, 1995
- Contribution of electrodes and microstructures to the electrical properties of Pb(Zr0.53Ti0.47)O3 thin film capacitorsJournal of Materials Research, 1994
- RuO2 Thin Films as Bottom Electrodes for High Dielectric Constant MaterialsJapanese Journal of Applied Physics, 1994
- The relationship between the MOCVD parameters and the crystallinity, epitaxy, and domain structure of PbTiO3 filmsJournal of Materials Research, 1994
- RuO2 films by metal-organic chemical vapor depositionJournal of Materials Research, 1993
- Reactively sputtered RuO2 thin film resistor with near zero temperature coefficient of resistanceThin Solid Films, 1991
- Ru and RuO2 as Electrical Contact Materials: Preparation and Environmental InteractionsJournal of the Electrochemical Society, 1979