Passivation of ohmic contacts to GaAs during alloying
- 15 March 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 59 (6) , 2082-2086
- https://doi.org/10.1063/1.336395
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
- Optimization of the heat treatment for forming AuGe based contacts to n-GaAsPhysica Status Solidi (a), 1985
- Au–Ge Ohmic Contact to n-GaAs by IR Lamp AlloyingJapanese Journal of Applied Physics, 1984
- The characteristics of AuGe-based ohmic contacts to n-GaAs including the effects of agingSolid-State Electronics, 1983
- Ohmic contacts to III–V compound semiconductors: A review of fabrication techniquesSolid-State Electronics, 1983
- An improved AuGe ohmic contact to n-GaAsSolid-State Electronics, 1982
- Volatile component loss and contact resistance of metals on GaAs and GaP during annealingSolid-State Electronics, 1982
- Improved ohmic properties of Au–Ge Contacts to thin n -GaAs layers alloyed with an SiO 2 overlayerElectronics Letters, 1979
- Effects of the Heating Rate in Alloying of An-Ge ton-Type GaAs on the Ohmic PropertiesJapanese Journal of Applied Physics, 1975
- New method for producing ideal metal-semiconductor ohmic contactsElectronics Letters, 1974
- Very low resistance NiAuGeNi contacts to n-GaAsSolid-State Electronics, 1974