Non-planar solid phase epitaxial growth processes in ion-implanted GaAs
- 1 July 1982
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 93 (1-2) , 179-184
- https://doi.org/10.1016/0040-6090(82)90103-1
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Low-temperature epitaxial regrowth of ion-implanted amorphous GaAsApplied Physics Letters, 1980
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- Chaneling effect measurements of the recrystallization of amorphous Si layers on crystal SiPhysics Letters A, 1975