Lattice strain relaxation of ZnS layers grown by vapour-phase epitaxy on (100) GaAs
- 31 December 1994
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 28 (1-3) , 55-60
- https://doi.org/10.1016/0921-5107(94)90015-9
Abstract
No abstract availableKeywords
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