Sol−Gel Fabrication and Electrical Property of Nanocrystalline (RE2O3)0.08(ZrO2)0.92 (RE = Sc, Y) Thin Films
- 12 January 2001
- journal article
- research article
- Published by American Chemical Society (ACS) in Chemistry of Materials
- Vol. 13 (2) , 372-378
- https://doi.org/10.1021/cm0005236
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Deposition and characterization of YSZ thin films by aerosol-assisted CVDMaterials Letters, 2000
- Sol–gel synthesis of yttria stabilized zirconia membranes through controlled hydrolysis of zirconium alkoxideJournal of Membrane Science, 1999
- Growth of yttria stabilized zirconia thin films by metallo-organic, ultrasonic spray pyrolysisThin Solid Films, 1999
- Material properties of heteroepitaxial yttria-stabilized zirconia films with controlled yttria contents on Si prepared by reactive sputteringVacuum, 1998
- Preparation of Perovskite‐Type La1 − x Sr x MnO3 Films by Vapor‐Phase Processes and Their Electrochemical PropertiesJournal of the Electrochemical Society, 1997
- Preparation and properties of Y2O3-doped ZrO2 thin films by the sol–gel processJournal of Materials Science, 1997
- Electrical properties of La0.5Sr0.5MnO3 thin filmsSolid State Ionics, 1995
- Synthesis and characterization of YSZ thin film electrolytesSolid State Ionics, 1994
- Zirconia-based solid electrolytes: microstructure, stability and ionic conductivitySolid State Ionics, 1992
- Electrical properties of plasma-sprayed yttria-stabilized zirconia filmsJournal of Materials Science, 1988