Li impurity in ZnSe: Electronic structure and the stability of the acceptor
- 15 April 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 43 (11) , 9362-9364
- https://doi.org/10.1103/physrevb.43.9362
Abstract
We have performed density-functional calculations of a Li impurity in ZnSe using the dynamical simulated-annealing scheme with the supercell method. We find that Li at a substitutional Zn site has a higher free energy than the sum of those of a Zn vacancy and interstitial Li when the chemical potential is located below 0.8 eV measured from the valence-band maximum. The calculated result shows that, in the case of the substitutional Li impurity, there occurs an inward breathing relaxation and a Jahn-Teller distortion around the impurity site. It is also found that the interstitial Li acts as a shallow donor with small lattice relaxation (Keywords
This publication has 21 references indexed in Scilit:
- Confirmation of P-Type Conduction in Li-Doped ZnSe Layers Grown on GaAs SubstratesJapanese Journal of Applied Physics, 1990
- Bound-Exciton and Edge-Emission Spectra Associated with Li and Na Acceptors in ZnSeJapanese Journal of Applied Physics, 1989
- Li-doped ZnSe epitaxial layers by ion implantationApplied Physics Letters, 1988
- Photoluminescence Properties of Li-Doped ZnSe Films Grown by Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1988
- Growth of p-type ZnSe:Li by molecular beam epitaxyApplied Physics Letters, 1988
- Metalorganic vapor phase epitaxy of low-resistivity p-type ZnSeApplied Physics Letters, 1988
- p-type conduction in ZnSe grown by temperature difference method under controlled vapor pressureJournal of Applied Physics, 1986
- Pseudopotentials that work: From H to PuPhysical Review B, 1982
- Excited states of shallow acceptors in ZnSePhysical Review B, 1979
- Pair Spectra and the Shallow Acceptors in ZnSePhysical Review B, 1973