Confirmation of P-Type Conduction in Li-Doped ZnSe Layers Grown on GaAs Substrates
- 1 January 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (1A) , L4
- https://doi.org/10.1143/jjap.29.l4
Abstract
Hall effect measurements were carried out for Li-doped MOCVD ZnSe layers whose GaAs substrates were removed. This made it possible to obtain the original p-type properties for the layers. Hole concentration, Hall mobility and specific resistivity were 4.1×1016 cm-3, 24 cm2/V ·s and 6.4 Ω·cm, respectively. Furthermore, the characteristics for the GaAs inversion layers, which were changed from semi-insulating to p-type by Zn diffusion from the ZnSe layers, were estimated by comparing the results of samples without GaAs substrates with those with GaAs substrates.Keywords
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