The role of dangling bonds in the transport and recombination of a-Si:Ge: H alloys

This publication has 18 references indexed in Scilit:

• Electron and hole transport in a-Si1−xGex:H alloys
  Journal of Applied Physics, 1986
• Urbach tail and gap states in hydrogenated a-SiC and a-SiGe alloys
  Solid State Communications, 1985
• Existence of a universal low-energy tail in the photoluminescence of a-${\mathrm{Si}}_{1\mathrm{-}\mathrm{x}}$${\mathrm{Ge}}_{\mathrm{x}}$:H alloys
  Physical Review B, 1985
• Structural, electrical, and optical properties of a-${\mathrm{Si}}_{1\mathrm{-}\mathrm{x}}$${\mathrm{Ge}}_{\mathrm{x}}$:H and an inferred electronic band structure
  Physical Review B, 1985
• Local Bonding in A—Sige Alloy Films
  MRS Proceedings, 1985
• High photoconductivity in dual magnetron sputtered amorphous hydrogenated silicon and germanium alloy films
  Applied Physics Letters, 1984
• Preparation of photoconductive a-SiGe alloy by glow discharge
  Journal of Non-Crystalline Solids, 1983
• ESR and IR studies on sputtered amorphous Si–C–H, Si–Ge–H and Ge–C–H
  AIP Conference Proceedings, 1981
• Electronic Properties of Amorphous Si_xGe_1−x:H Films
  Physica Status Solidi (b), 1980
• Zum Mechanismus des lichtelektrischen Prim rstromes in isolierenden Kristallen
  The European Physical Journal A, 1932