Spectral hole burning and uniaxial stress study of radiation-induced defects in diamond

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Abstract
A persistent spectral hole‐burning technique has been employed to investigate the impact of uniaxial stress on the defects created by neutron irradiation in natural Ia‐type diamond. Shifts of the spectral holes in the 649, 681, and 774 nm zero‐phonon lines (ZPLs) have been measured. The values of the shifts, 2.2, 1.2, and 0.65 cm−1/kbar, obtained from these measurements have been compared with the stress shifts of the lines of defects with well‐known structure. It is suggested that vacancies are present in the defect responsible for the 681 nm ZPL. A combination of the results of polarized luminescence and uniaxial stress experiments leads to the conclusion of rhombic I symmetry of the defects that give rise to the 649 and 681 nm ZPLs.