Transport in the inversion layer of a MOS transistor: use of Kubo-Greenwood formalism

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Abstract
A study of the electronic transport in MOS transistor inversion layers is presented. The use of the Kubo-Greenwood formalism allows the possibility of explaining the global behaviour of the transport coefficients (conductivity, mobility, etc.) from the weak inversion regime (non-degenerate) to the strong inversion regime (degenerate) over a wide range of temperature. In particular, it is shown that physical phenomena arising from miniaturisation and/or low-temperature operation such as quantisation of the inversion layer or carrier localisation are of primary importance for the determination of the transport coefficients of MOS transistor inversion layers. The incorporation of such phenomena into the modelling of the operation of MOS devices, is thus highly desirable, even at temperatures close to room temperature.