A monolithic W-band preamplified diode detector

Abstract
A monolithic W-band preamplified diode detector based on 0.1- mu m pseudomorphic AlGaAs/InGaAs/GaAs HEMT (high electron mobility transistor) technology was developed. This chip consists of a Schottky diode detector with a two-stage W-band low-noise amplifier (LNA) and has a measured detector responsivity of 300 V/mW at 94 GHz and a tangential sensitivity of -62 dBm. This is the first reported monolithic preamplified diode detector at this frequency. A higher-sensitivity preamplified detector which was built by cascading two monolithic three-stage W-band LNAs with the preamplified detector chip also shows a tangential sensitivity of -85 dBm. This monolithic chip is ideal for insertion into W-band radiometer and passive imaging array systems.<>

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