A Study of MIS Structures Prepared Under Ultra-High-Vacuum Conditions
- 1 January 1981
- book chapter
- Published by Springer Nature
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Studies of the effect of oxidation time and temperature on the Si-SiO2 interface using Auger sputter profilingJournal of Applied Physics, 1979
- Oxide formation on the silicon (111) surface studied by Auger electron spectroscopy and by low energy electron loss spectroscopyThin Solid Films, 1979
- Thermal oxidation of silicon in various oxygen partial pressures diluted by nitrogenJournal of Applied Physics, 1977