An accurate semi-empirical saturation drain current model for LDD n-MOSFET

1 March 1996

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 17 (3) , 145-147
https://doi.org/10.1109/55.485195

Abstract

Based on a new empirical mobility model which is solely dependent on V/sub gs/, V/sub t/ and T/sub ox/, a corresponding semiempirical I/sub dsat/ model for n-MOSFET including velocity saturation, mobility degradation due to increased vertical effective field, and source/drain series resistance of LDD structures is reported in this paper. A good agreement among the model and the measurement data from several different technologies is shown. Prediction of I/sub dsat/ for the future generations of device scaling and low-power applications by using this new model is presented.

Keywords

MOSFET CIRCUITS
DEGRADATION
PREDICTIVE MODELS
ELECTRON MOBILITY
VOLTAGE
SCATTERING
ELECTRICAL RESISTANCE MEASUREMENT
VERY LARGE SCALE INTEGRATION
MOS DEVICES
TEMPERATURE

This publication has 1 reference indexed in Scilit:

Approaches to Scaling
Published by Elsevier ,1989