Approaches to Scaling

This publication has 33 references indexed in Scilit:

• Extremely high transconductance (above 500 mS/mm) MOSFET with 2.5 nm gate oxide
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1985
• Generalized scaling theory and its application to a ¼ micrometer MOSFET design
  IEEE Transactions on Electron Devices, 1984
• The impact of scaling laws on the choice of n-channel or p-channel for MOS VLSI
  IEEE Electron Device Letters, 1980
• VLSI limitations from drain-induced barrier lowering
  IEEE Journal of Solid-State Circuits, 1979
• Design of ion-implanted MOSFET's with very small physical dimensions
  IEEE Journal of Solid-State Circuits, 1974
• Effect of Coulomb scattering on silicon surface mobility
  Journal of Applied Physics, 1974
• On the role of scattering by surface roughness in silicon inversion layers
  Surface Science, 1973
• Transport Properties of Electrons in Inverted Silicon Surfaces
  Physical Review B, 1968
• Carrier mobility and current saturation in the MOS transistor
  IEEE Transactions on Electron Devices, 1965
• Source to drain resistance beyond pinch-off in metal-oxide-semiconductor transistors (MOST)
  IEEE Transactions on Electron Devices, 1965