Photoconduction in GaSe thin films
- 1 July 1981
- journal article
- research article
- Published by Taylor & Francis in International Journal of Electronics
- Vol. 51 (1) , 87-90
- https://doi.org/10.1080/00207218108901303
Abstract
Photoconduction in GaSe thin films has been measured in the spectral energy range 1[sdot]0 eV-3[sdot]2 eV. Extrapolation of the linear region of the spectral response curve gives 1[sdot]67 eV as the energy gap of the as-grown films. Measurements have been made in the temperature- range 77 K–300 K and the activation energy for the photo-conductive processes is found to be 0[sdot]19 eV.Keywords
This publication has 5 references indexed in Scilit:
- Field-dependence of the optical band gap in CdO-P 2 O 5 glassInternational Journal of Electronics, 1981
- DC Conduction in Si3N4Films Grown by the Pyrolytic Reaction between Silane and AmmoniaJapanese Journal of Applied Physics, 1978
- Growth of single crystals of GaSe with natural facets at large angles to the layersPhysica Status Solidi (a), 1977
- Single-crystal growth of layered crystalsIl Nuovo Cimento B (1971-1996), 1977
- Semiconductors of the type AIIIBVIJournal of Physics and Chemistry of Solids, 1959