Resonant Raman scattering on free and bound excitons in GaN
- 5 October 2001
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 64 (16) , 165314
- https://doi.org/10.1103/physrevb.64.165314
Abstract
We comprehensively investigated the resonant Raman scattering effect in GaN at low temperatures applying a frequency-doubled titan-sapphire laser as quasicontinuous excitation source. The scattering cross sections of the and phonon modes exhibit a resonance enhancement at the donor- and acceptor-bound excitons. The enhancement of the modes is even stronger than for the nonpolar mode due to a Fröhlich interaction. Furthermore, the temporal behavior of the phonons near the resonance was studied using time-resolved spectroscopy. We found that the resonance process below the bound excitons is likely to proceed via the free exciton as intermediate state.
Keywords
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