A critical assessment of the overcoordination model for the Pb center at the 〈111〉 Si/SiO2 interface
- 1 October 1989
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 39 (1-4) , 309-316
- https://doi.org/10.1016/0169-4332(89)90445-5
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
- Theory of thecenter at the Si/interfacePhysical Review B, 1987
- Hyperfine interactions of thecenter at the/Si(111) interfacePhysical Review Letters, 1987
- Electronic traps and P b centers at the Si/SiO2 interface: Band-gap energy distributionJournal of Applied Physics, 1984
- Hole traps and trivalent silicon centers in metal/oxide/silicon devicesJournal of Applied Physics, 1984
- 2 9Si hyperfine structure of unpaired spins at the Si/SiO2 interfaceApplied Physics Letters, 1983
- Characteristic electronic defects at the Si-SiO2 interfaceApplied Physics Letters, 1983
- Characterization of Si/SiO2 interface defects by electron spin resonanceProgress in Surface Science, 1983
- Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance IIJapanese Journal of Applied Physics, 1972
- Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance IJapanese Journal of Applied Physics, 1971
- Characteristics of the Surface-State Charge (Qss) of Thermally Oxidized SiliconJournal of the Electrochemical Society, 1967