Ag mass transport on Si(111) in the 350–450°C temperature range
- 2 December 1990
- journal article
- Published by Elsevier in Surface Science
- Vol. 239 (3) , 213-221
- https://doi.org/10.1016/0039-6028(90)90223-u
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
- Biassed secondary electron imaging studies of Ag/Si(111)Ultramicroscopy, 1989
- Electromigration of Ag Ultrathin Films on Si(111) 7×7Japanese Journal of Applied Physics, 1988
- Surface cleaning of Si(100) and Ag/Si(100): Characterisation by SEM, AES and RHEEDSurface Science, 1984
- Physics and electronics of the noble-metal/elemental-semiconductor interface formation: A status reportSurface Science, 1983
- Diffusion of Ag on clean Ge(111) with different step densitiesJournal of Physics C: Solid State Physics, 1983
- The structural and electronic properties of cleaved silicon (111) surfaces following adsorption of silverApplications of Surface Science, 1981
- Direct observation of the nucleation and growth modes of Ag/Si(111)Surface Science, 1980
- Surface self-diffusion on Ni(110): Temperature dependence and directional anisotropySurface Science, 1978
- Cohesive energy of the two-dimensional Si(111)3 × 1 Ag and Si(111)√3-R(30°)Ag phases of the Silver (deposit)-silicon(111) (substrate) systemSurface Science, 1978
- Spectral Emissivity of SiliconJapanese Journal of Applied Physics, 1967