Measurement of aluminium concentration in GaAlAs epitaxial layers by double-axis X-ray diffraction
- 1 November 1988
- journal article
- Published by Elsevier in Materials Letters
- Vol. 7 (5-6) , 239-241
- https://doi.org/10.1016/0167-577x(88)90019-5
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Structure of vapor-deposited GaxIn1−xAs crystalsJournal of Applied Physics, 1974